High Side Gate Driver Charge Pump

Here is a tested version of floating charge pump.

High side gate driver charge pump.

The mic5019 operates from a 2 7v to 9v supply and generates gate voltages of 9 2v from a 3v supply and 16v from a 9v supply. Drives the gate of an external power mosfet. Ti discrete charge pump design slva398a and ir hv floating mos gate driver ics an 978. 4 providing continuous gate drive using a charge pump slva444 february 2011 submit documentation feedback.

Usually the high side of the load. The tle7183qu is designed for a 12 v power net. 8vboost charge pump boost capacitor. Output switches high d1 turns off and the other side of c2 is charged to vcc.

It contains a completely self contained charge pump to fully enhance an n channel mosfet switch with no external components when the internal drain comparator senses that the switch current has exceeded the preset leve. A bootstrap capacitor from vboost to the fet source pin supplies charge to quickly enhance the gate output during. Because the capacitor retains the voltage that passes across it the resulting waveform is a square wave that goes from vcc to twice vcc that is 2 vcc. Typical applications are cooling fan water pump electrohydraulic and electric power steering.

Its 3 high side and 3 low side output stages are powerful enough to drive mosfets with a gate charge of 400 nc with rise and fall times of approximately 150 ns. Digital power control drivers powertrain modules 8 digital power isolated controllers 19 gallium nitride gan ics 7 gate drivers 227 half bridge drivers 63 isolated gate drivers 49 low side drivers 115 lcd oled display power drivers 80 led drivers 355 automotive led drivers 82 backlight led drivers 85 flash led. The device consumes a low 77µa of. The charge pump typically supplies 30μa charging 800pf of gate capacitance in 400μs vbatt 15v.

The mic5019 is a high side mosfet driver with integrated charge pump designed to switch an n channel enhancement type mosfet control signal in high side or low side applications. Addition of a simple charge pump both the fast switching. Two scenarios was tested vin 56vdc in both case. Charge pumps are used in h bridges in high side drivers for gate driving high side n channel power mosfets and igbts.

I found two documents particularly helpful. When the centre of a half bridge goes low the capacitor is charged through a diode and this charge is used to later drive the gate of the high side fet a few volts above the source voltage so as to switch it on. Also limits vgs to 15v maximum to prevent gate to source damage. The lt1910 is a high side gate driver that allows the use of low cost n channel power mosfets for high side switching applications.